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| data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 1 general description the ap2111 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600ma (min) c ontinuous load current. the ap2111 provides 1.2v 1.8v, 2.5v, 3.3v and 4.8v regulated output, and provides excellent output accuracy 1.5%, it is also provides a excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. the ap2111 has built-in auto discharge function. the ap2111 features low power consumption. the ap2111 is available in soic-8, psop-8 and sot-223 packages. features ? output voltage accuracy: 1.5% ? output current: 600ma (min) ? foldback short current protection: 50ma ? enable function to turn on/off v out ? low dropout voltage (3.3v): 250mv (typ) @ i out =600ma ? excellent load regulation: 0.2%/a (typ) ? excellent line regulation: 0.02%/v (typ) ? low quiescent current: 55 a (typ) ? low standby current: 0.01 a (typ) ? low output noise: 50 v rms ? psrr: 65db @ f=1khz, 65db @ f=100hz ? otsd protection ? stable with 1.0 f flexible cap: ceramic, tantalum and aluminum electrolytic ? operating temperature range: -40c to 85c ? esd: mm 400v, hbm 4000v applications ? laptop computer ? potable dvd ? lcd monitor figure 1. package types of ap2111 soic-8 psop-8 sot-223
data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 2 pin configuration figure 2. pin configuration of ap2111 (top view) pin descriptions pin number soic-8/psop-8 sot-223 pin name function 4 3 vin input voltage 2 2 vout output voltage 8 en chip enable, h ? normal work, l ? shutdown output 1, 3, 5, 6, 7 1 gnd ground m package ( soic-8 ) mp package ( psop-8 ) h package ( so t -223 ) data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 3 functional block diagram uvlo & shutdown logic thermal shutdown v ref gnd en vout vin 3m 8 1, 3, 5, 6, 7 (1) 4 (3) 2 (2) foldback current limit figure 3. functional block diagram of ap2111 a (b) a: soic-8/psop-8 b: sot-223 data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 4 ordering information ap2111 - package temperature range part number marking id packing type ap2111m-1.2g1 2111m-1.2g1 tube ap2111m-1.2trg1 2111m-1.2g1 tape & reel ap2111m-1.8g1 2111m-1.8g1 tube ap2111m-1.8trg1 2111m-1.8g1 tape & reel ap2111m-2.5g1 2111m-2.5g1 tube ap2111m-2.5trg1 2111m-2.5g1 tape & reel ap2111m-3.3g1 2111m-3.3g1 tube soic-8 -40 to 85 c ap2111m-3.3trg1 2111m-3.3g1 tape & reel ap2111mp-1.2g1 2111mp-1.2g1 tube ap2111mp-1.2trg1 2111mp-1.2g1 tape & reel ap2111mp-1.8g1 2111mp-1.8g1 tube ap2111mp-1.8trg1 2111mp-1.8g1 tape & reel ap2111mp-2.5g1 2111mp-2.5g1 tube ap2111mp-2.5trg1 2111mp-2.5g1 tape & reel ap2111mp-3.3g1 2111mp-3.3g1 tube psop-8 -40 to 85 c ap2111mp-3.3trg1 2111mp-3.3g1 tape & reel ap2111h-1.2trg1 gh11b tape & reel ap2111h-1.8trg1 gh11g tape & reel ap2111h-2.5trg1 gh11h tape & reel ap2111h-3.3trg1 gh11c tape & reel sot-223 -40 to 85 c ap2111h-4.8trg1 gh13d tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. package m: soic-8 mp: psop-8 h: so t -223 1.2: fixed output 1.2v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.3: fixed output 3.3v 4.8: fixed output 4.8v circuit type g1: green blank: tube tr: tape & reel data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc soic-8 144 psop-8 143 thermal resistance (no heatsink) ja sot-223 128 oc/w esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min typ max unit supply voltage v in 2.5 6.0 v operating ambient temperature range t a -40 85 c data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 6 electrical characteristics ap2111-1.2 electrical ch aracteristic (note 2) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test conditions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.2 v out 101.5% v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 600 ma load regulation (v out /v out ) i out v in =2.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.5v v in 6v, i out =30ma 0.02 %/v i out =10ma 1000 1300 i out =300ma 1000 1300 dropout voltage v drop i out =600ma 1000 1300 mv quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=1khz 65 db output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 ven low voltage v il enable logic low, regulator off 0 0.4 v start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? vout discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 30 c soic-8 74.6 psop-8 43.7 thermal resistance (junction to case) jc sot-223 50.9 c /w data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 7 electrical characteristics (continued) ap2111-1.8 electrical ch aracteristic (note 2) v in =2.8v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test conditions min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma v out 98.5% 1.8 v out 101.5% v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 600 ma load regulation (v out /v out ) i out v out =1.8v, v in =v out +1v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.8v v in 6v, i out =30ma 0.02 %/v i out =10ma 500 700 i out =300ma 500 700 dropout voltage v drop i out =600ma 500 700 mv quiescent current i q v in =2.8v, i out =0ma 55 80 a standby current i std v in =2.8v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejectio n ratio psrr ripple 0.5vp-p v in =2.8v, i out =100ma f=1khz 65 db output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 ven low voltage v il enable logic low, regulator off 0 0.4 v start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? vout discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 30 c soic-8 74.6 psop-8 43.7 thermal resistance (junction to case) jc sot-223 50.9 c / w data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) ap2111-2.5 electrical ch aracteristic (note 2) v in =3.5v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol condition min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma v out 98.5% 2.5 v out 101.5% v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 600 ma load regulation (v out /v out ) i out v out =2.5v, v in =v out +1v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 3.5v v in 6v, i out =30ma 0.02 %/v i out =10ma 5 8 i out =300ma 125 200 dropout voltage v drop i out =600ma 250 400 mv quiescent current i q v in =3.5v, i out =0ma 55 80 a standby current i std v in =3.5v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejectio n ratio psrr ripple 0.5vp-p v in =3.5v, i out =100ma f=1khz 65 db output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 ven low voltage v il enable logic low, regulator off 0 0.4 v start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? vout discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 30 c soic-8 74.6 psop-8 43.7 thermal resistance (junction to case) jc sot-223 50.9 c /w data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2111-3.3 electrical ch aracteristic (note 2) v in =4.3v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol condition min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma v out 98.5% 3.3 v out 101.5% v maximum output current i out(max) v in =4.3v, v out =3.251v to 3.350v 600 ma load regulation (v out /v out ) i out v in =4.3v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 4.3v v in 6v, i out =30ma 0.02 %/v i out =10ma 5 8 i out =300ma 125 200 dropout voltage v drop i out =600ma 250 400 mv quiescent current i q v in =4.3v, i out =0ma 55 80 a standby current i std v in =4.3v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejectio n ratio psrr ripple 0.5vp-p v in =4.3v, i out =100ma f=1khz 65 db output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 ven low voltage v il enable logic low, regulator off 0 0.4 v start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m ? vout discharge resistor r dchg set en pin at low 60 ? thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 30 c soic-8 74.6 psop-8 43.7 thermal resistance (junction to case) jc sot-223 50.9 c / w data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 10 electrical characteristics (continued) ap2111-4.8 electrical characteristi c (note 2) (only for sot-223) v in =5.5v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol test conditions min typ max unit output voltage v out v in =5.5v, 1ma i out 30ma v out 98.5% 4.8 v out 101.5% v maximum output current i out(max) v in =5.5v, v out =4.751v to 4.850v 600 ma load regulation (v out /v out ) i out v in =5.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 5.5v v in 6v, i out =30ma 0.02 %/v i out =10ma 5 8 i out =300ma 100 200 dropout voltage v drop i out =600ma 200 400 mv quiescent current i q v in =5.5v, i out =0ma 55 80 a standby current i std v in =5.5v, v en in off mode 0.01 1.0 a f=100hz 65 power supply rejectio n ratio psrr ripple 0.5vp-p v in =5.5v, i out =100ma f=1khz 65 db output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms thermal shutdown temperature t otsd 160 thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc sot-223 50.9 c data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 11 typical performance characteristics figure 4. output voltage vs. input voltage figure 5. out put voltage vs. input voltage figure 6. output voltage vs. input voltage fi gure 7. quiescent current vs. temperature 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 no load t a =-40 o c t a =25 o c t a =85 o c v out =1.2v output voltage (v) input voltage (v) 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) input voltage (v) t a =-40 o c t a =25 o c t a =85 o c v out =3.3v no load -40-20 0 20406080 46 48 50 52 54 56 58 60 62 64 66 68 70 v in =2.5v no load quiescent current ( a) temperature ( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v out =4.8v t a =25 o c output voltage (v) input voltage (v) i out =0ma i out =100ma i out =300ma i out =600ma data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) 1.01.52.02.53.03.54.04.55.05.56.0 0 10 20 30 40 50 60 70 quiescent current ( a) t a =-40 o c t a =25 o c t a =85 o c no load input voltage (v) -40-200 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =300ma i out =600ma v in =4.3v c in =1 f c out =1 f -40 -20 0 20 40 60 80 1.200 1.202 1.204 1.206 1.208 1.210 i out =300ma i out =600ma i out =10ma i out =100ma v in =2.5v c in =1 f c out =1 f output voltage (v) temperature ( o c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v in =2.5v output voltage (v) output current (a) t a = -40 o c t a =25 o c t a =85 o c figure 10. output voltage vs. temperature figure 11. output voltage vs. output current figure 8. quiescent current vs. input vo ltage figur e 9. output volta ge vs. temperature data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) 0.00.10.20.30.40.50.60.70.80.91.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) t a =-40 o c t a = 25 o c t a = 85 o c v in =4.3v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) v in =4.0v v in =4.3v v in =5.0v v in =5.5v v in =6.0v t a =25 o c c in =1 f c out =1 f 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t a =25 o c c in =1 f c out =1 f v in =5.0v v in =2.0v v in =5.5v v in =6.0v v in =2.5v output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v out =4.8v output voltage (v) output current (a) v in =5.0v v in =5.3v v in =5.5v v in =6.0v figure 14. output voltage vs. output current figure 15. output voltage vs. output current figure 12. output voltage vs. output current figure 13. output voltage vs. output current data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 dropout voltage (mv) output current (a) v out =3.3v t a =-40 o c t a = 25 o c t a = 85 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 40 60 80 100 120 140 160 180 200 220 240 260 ground current ( a) output current (a) v in =4.3v t a =-40 o c t a = 25 o c t a = 85 o c 100 1k 10k 100k 30 35 40 45 50 55 60 65 70 v out =1.2v i out =10ma i out =100ma i out =300ma psrr (db) frequency (hz) 20 v in =2.5v ripple=0.5v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 dropout voltage (v) output current (a) t a =-40 o c t a =25 o c t a =85 o c v out =4.8v figure 16. dropout voltage vs. output current figure 17. dropout voltage vs. output current figure 18. ground current vs. output current figure 19. psrr vs. frequency data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) figure 20. load transient figure 21. enable on figure 22. enable off data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 16 typical application (note 4) note 4: it is recommended to use x7 r or x5r dielectric capacitor if 1.0 f ceramic capacitor is selected as input/output capacitors. figure 23. typical application of ap2111 data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 17 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional. data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 18 mechanical dimensions (continued) psop-8 unit: mm(inch) 3.202(0.126) 3.402(0.134) data sheet 600ma cmos ldo regulator with enable ap2111 jan. 2011 rev. 1. 4 bcd semiconductor manufacturing limited 19 mechanical dimensions (continued) sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited |
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